Infineon IPT Type N-Channel MOSFET, 408 A, 80 V, 16-Pin HDSOP IPTC011N08NM5ATMA1
- RS-stocknr.:
- 259-2729
- Fabrikantnummer:
- IPTC011N08NM5ATMA1
- Fabrikant:
- Infineon
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€ 7,39
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€ 8,94
(incl. BTW)
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*prijsindicatie
- RS-stocknr.:
- 259-2729
- Fabrikantnummer:
- IPTC011N08NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 408A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HDSOP | |
| Series | IPT | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Forward Voltage Vf | 0.88V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 408A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HDSOP | ||
Series IPT | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Forward Voltage Vf 0.88V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-23
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