Infineon IPTC N-Channel MOSFET, 279 A, 100 V Enhancement, 16-Pin HDSOP IPTC019N10NM5ATMA1
- RS-stocknr.:
- 233-4380
- Fabrikantnummer:
- IPTC019N10NM5ATMA1
- Fabrikant:
- Infineon
Ontvang bulkkorting
Voeg 20 meer toe om 11% te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 10,97
(excl. BTW)
€ 13,27
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 1.540 stuk(s) vanaf 06 november 2026
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 2 - 18 | € 5,485 | € 10,97 | - |
| 20 - 48 | € 4,88 | € 9,76 | 11% |
| 50 - 98 | € 4,555 | € 9,11 | 16% |
| 100 - 198 | € 4,22 | € 8,44 | 23% |
| 200 + | € 3,95 | € 7,90 | 27% |
*prijsindicatie
- RS-stocknr.:
- 233-4380
- Fabrikantnummer:
- IPTC019N10NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 279A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HDSOP | |
| Series | IPTC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.35mm | |
| Width | 10.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 279A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HDSOP | ||
Series IPTC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.35mm | ||
Width 10.3mm | ||
Automotive Standard No | ||
The Infineon IPTC019N10NM5 is part of OptiMOS 5 power MOSFET in TOLT in that TO-Leaded top side-cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS 5 technology allows best-in-class products in 100 V as well as high current rating 300 A for high power density designs. With top side-cooling setup the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
Negative stand-off
Saving in cooling system
Increased system efficiency enabling extended battery life time
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