Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN IRFH8303TRPBF
- RS-stocknr.:
- 258-3972
- Fabrikantnummer:
- IRFH8303TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,72
(excl. BTW)
€ 4,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 3.998 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,86 | € 3,72 |
| 20 - 48 | € 1,675 | € 3,35 |
| 50 - 98 | € 1,56 | € 3,12 |
| 100 - 198 | € 1,47 | € 2,94 |
| 200 + | € 1,36 | € 2,72 |
*prijsindicatie
- RS-stocknr.:
- 258-3972
- Fabrikantnummer:
- IRFH8303TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Length 6mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
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