Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 30 V PQFN IRLHS6376TRPBF
- RS-stocknr.:
- 257-9447
- Fabrikantnummer:
- IRLHS6376TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 3,36
(excl. BTW)
€ 4,07
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 3.980 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,336 | € 3,36 |
| 100 - 240 | € 0,319 | € 3,19 |
| 250 - 490 | € 0,285 | € 2,85 |
| 500 - 990 | € 0,202 | € 2,02 |
| 1000 + | € 0,179 | € 1,79 |
*prijsindicatie
- RS-stocknr.:
- 257-9447
- Fabrikantnummer:
- IRLHS6376TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.9W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.9W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLHS series is the 30V Dual N channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Low RDS (on) in a small package
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