Infineon HEXFET Type N-Channel MOSFET, 82 A, 30 V Enhancement, 8-Pin PQFN

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RS-stocknr.:
217-2612
Fabrikantnummer:
IRFH8325TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

3.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.02mm

Standards/Approvals

RoHS

Height

1.17mm

Width

4.98 mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

Industry standard surface-mount power package

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