Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

Bekijk alle MOSFETs
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
258-3971
Fabrikantnummer:
IRFH8303TRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

58nC

Maximum Power Dissipation Pd

156W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6mm

Standards/Approvals

RoHS

Width

5 mm

Height

0.9mm

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

Gerelateerde Links