Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF
- RS-stocknr.:
- 257-5887
- Fabrikantnummer:
- IRFH5301TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,98
(excl. BTW)
€ 8,445
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.640 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,396 | € 6,98 |
| 50 - 120 | € 1,244 | € 6,22 |
| 125 - 245 | € 1,174 | € 5,87 |
| 250 - 495 | € 0,838 | € 4,19 |
| 500 + | € 0,758 | € 3,79 |
*prijsindicatie
- RS-stocknr.:
- 257-5887
- Fabrikantnummer:
- IRFH5301TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.85mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Length | 6mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.85mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Length 6mm | ||
Width 5 mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 40 A, 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 30 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 30 V PQFN IRLHS6376TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN IRFHM830TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 40 A, 30 V PQFN IRLHM630TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5302TRPBF