Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

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Subtotaal (1 rol van 4800 eenheden)*

€ 4.454,40

(excl. BTW)

€ 5.390,40

(incl. BTW)

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  • Verzending vanaf 07 april 2026
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4800 +€ 0,928€ 4.454,40

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RS-stocknr.:
258-3962
Fabrikantnummer:
IRF6646TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Package Type

WDSON

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.5mΩ

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

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