Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 3,25
(excl. BTW)
€ 3,93
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 februari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,625 | € 3,25 |
| 20 - 48 | € 1,345 | € 2,69 |
| 50 - 98 | € 1,265 | € 2,53 |
| 100 - 198 | € 1,17 | € 2,34 |
| 200 + | € 1,09 | € 2,18 |
*prijsindicatie
- RS-stocknr.:
- 258-3968
- Fabrikantnummer:
- IRF6727MTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 770mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 770mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
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