Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- RS-stocknr.:
- 258-0710
- Fabrikantnummer:
- BSZ018N04LS6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,62
(excl. BTW)
€ 3,18
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 4.780 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,31 | € 2,62 |
| 20 - 48 | € 1,165 | € 2,33 |
| 50 - 98 | € 1,085 | € 2,17 |
| 100 - 198 | € 1,02 | € 2,04 |
| 200 + | € 0,94 | € 1,88 |
*prijsindicatie
- RS-stocknr.:
- 258-0710
- Fabrikantnummer:
- BSZ018N04LS6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
Gerelateerde Links
- Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 40 A, 30 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 40 A, 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET, 40 A, 25 V N, 8-Pin TSDSON BSZ036NE2LSATMA1
- Infineon BSZ Type N-Channel MOSFET, 40 A, 30 V N, 8-Pin TSDSON BSZ019N03LSATMA1
- Infineon BSZ Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin TSDSON BSZ084N08NS5ATMA1
- Infineon BSZ Type N-Channel MOSFET, 7 A, 200 V N, 8-Pin TSDSON