Infineon BSZ N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1

RS-stocknr.:: 258-0709
Fabrikantnummer:: BSZ018N04LS6ATMA1
Fabrikant:: Infineon

Infineon BSZ N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1

Subtotaal (1 rol van 5000 eenheden)*

€ 3.685,00

(excl. BTW)

€ 4.460,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 09 november 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,737	€ 3.685,00

*prijsindicatie

RS-stocknr.:: 258-0709
Fabrikantnummer:: BSZ018N04LS6ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	158A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSDSON
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.7mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	780mV
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 158A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSDSON
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.7mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf 780mV
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSZ018N04LS6ATMA1

Infineon BSZ Series MOSFET, 40V Maximum Drain-Source Voltage, 158A Maximum Continuous Drain Current - BSZ018N04LS6ATMA1

This MOSFET is a surface-mount N-channel transistor designed for high-current switching in Compact power stages. It delivers significant continuous drain capability and is suited to thermal environments across a broad range. The device meets RoHS requirements and is supplied in an 8‑pin TSDSON package for low-profile board assemblies.

Features and Benefits:

• Very low Rds(on) 2.7mΩ enables reduced conduction losses
• High power dissipation 83W allows sustained thermal loading
• Typical gate charge 31 nC supports efficient switching control
• Low forward voltage 0.78V reduces on-state voltage drop
• Wide operating range -55°C to 175°C suits harsh conditions

Applications

• Suitable for 40V 158A power stages in DC-DC converters
• Ideal for high-current SMD MOSFET roles in power supplies
• Used with surface-mount layouts requiring a TSDSON 8‑pin footprint
• Can be used for switching in Compact high-power modules

What package and pin count does it use?

It is supplied in a TSDSON package with eight pins.

What gate-handling limits must designers observe?

The device accepts up to 20V between gate and source.

How does it perform under varying temperatures?

It operates across a range from -55°C up to 175°C.

Is this device suitable for automotive standards?

It is not specified as meeting automotive-grade standards.