Infineon BSZ Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin TSDSON BSZ084N08NS5ATMA1
- RS-stocknr.:
- 258-0717
- Fabrikantnummer:
- BSZ084N08NS5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 0,80
(excl. BTW)
€ 0,96
(incl. BTW)
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- Plus verzending 4.996 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 0,40 | € 0,80 |
*prijsindicatie
- RS-stocknr.:
- 258-0717
- Fabrikantnummer:
- BSZ084N08NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 63W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 63W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
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