Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF

RS-stocknr.:: 257-9346
Fabrikantnummer:: IRFB4229PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 73,65

(excl. BTW)

€ 89,10

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 300 stuk(s) vanaf 02 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,473	€ 73,65
100 - 200	€ 1,211	€ 60,55
250 +	€ 1,196	€ 59,80

*prijsindicatie

RS-stocknr.:: 257-9346
Fabrikantnummer:: IRFB4229PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	46mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	72nC
	Maximum Gate Source Voltage Vgs	10V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 46mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 72nC
	Maximum Gate Source Voltage Vgs 10V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFB4229PBF

Infineon HEXFET Series MOSFET, 250V Maximum Drain-Source Voltage, 46A Maximum Continuous Drain Current - IRFB4229PBF

This MOSFET is a through-hole N-channel power transistor designed for switching and amplification in high-voltage circuitry. It operates across a wide temperature span and is suitable for applications requiring robust gate-drive characteristics and moderate on-resistance in a TO-220 package.

Features and Benefits:

• 46A continuous current enables high-load switching capability
• 46mΩ Rds(on) reduces conduction losses in power paths
• 250V drain-source rating permits high-voltage operation
• 72nC typical gate charge supports predictable switching behaviour
• 10V maximum gate-source voltage allows standard gate-drive levels

Applications

• Used for high-voltage power conversion stages
• Suitable for discrete motor-drive switching elements
• Ideal for general-purpose through-hole power boards
• Can be used for industrial control switching modules
• Used with thermal management in elevated-temperature systems

What package type is supplied for mounting convenience?

It is offered in a TO-220 through-hole package for easy PCB fastening and heat-sinking.

What temperature range can it withstand during operation?

The device is rated to function from -40°C up to 175°C.

What gate-drive constraints should be observed?

The gate-source voltage must not exceed 10V to avoid damaging the gate oxide.

Is this device suitable for automotive-standard specification use?

It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.