Infineon HEXFET N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF

RS-stocknr.:: 124-8961
Fabrikantnummer:: IRFB4332PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 176,40

(excl. BTW)

€ 213,45

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 1.200 stuk(s) vanaf 21 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 3,528	€ 176,40
100 - 200	€ 3,352	€ 167,60
250 +	€ 3,281	€ 164,05

*prijsindicatie

RS-stocknr.:: 124-8961
Fabrikantnummer:: IRFB4332PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	390W
	Typical Gate Charge Qg @ Vgs	99nC
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Length	10.66mm
	Standards/Approvals	No
	Width	4.82mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 390W
	Typical Gate Charge Qg @ Vgs 99nC
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Length 10.66mm
	Standards/Approvals No
	Width 4.82mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF

This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging Advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.

Features & Benefits

• N-channel configuration supports efficient current flow

• Continuous drain current rating of 60A facilitates strong performance

• High voltage capacity up to 250V enhances versatility

• Low on-resistance increases efficiency and minimises heat generation

• Enhancement mode operation improves stability for digital applications

• High power dissipation capability contributes to reliability under load

Applications

• Applied in energy recovery systems to boost efficiency

• Suitable for pass switch where space is limited

• Utilised in plasma display panels to enhance performance

• Ideal for automation controls demanding sustained high current

What is the temperature range for optimal operation?

The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.

How does the gate threshold voltage affect performance?

With a threshold voltage between 3V and 5V, it permits precise control in switching applications.

Can it handle high pulsed currents?

Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.

What are the thermal management requirements?

To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.

Is it compatible with various mounting configurations?

The TO-220AB package allows for straightforward through-hole mounting, enhancing compatibility across multiple circuit designs.