Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- RS-stocknr.:
- 257-9296
- Fabrikantnummer:
- IRF6644TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 5,59
(excl. BTW)
€ 6,764
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 4.470 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,795 | € 5,59 |
| 20 - 48 | € 2,46 | € 4,92 |
| 50 - 98 | € 2,315 | € 4,63 |
| 100 - 198 | € 2,155 | € 4,31 |
| 200 + | € 1,535 | € 3,07 |
*prijsindicatie
- RS-stocknr.:
- 257-9296
- Fabrikantnummer:
- IRF6644TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8
- Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8 IRF9388TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 30 V SO-8 IRF7313TRPBF
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF
