Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263
- RS-stocknr.:
- 218-3095
- Fabrikantnummer:
- IRF3710STRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 800 eenheden)*
€ 497,60
(excl. BTW)
€ 602,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 4.000 stuk(s) vanaf 30 december 2025
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 - 800 | € 0,622 | € 497,60 |
| 1600 + | € 0,591 | € 472,80 |
*prijsindicatie
- RS-stocknr.:
- 218-3095
- Fabrikantnummer:
- IRF3710STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
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