Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8
- RS-stocknr.:
- 257-9295
- Fabrikantnummer:
- IRF6644TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4800 eenheden)*
€ 4.392,00
(excl. BTW)
€ 5.313,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 31 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4800 + | € 0,915 | € 4.392,00 |
*prijsindicatie
- RS-stocknr.:
- 257-9295
- Fabrikantnummer:
- IRF6644TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8 IRF6644TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 IRF3710STRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
