Vishay Type N-Channel MOSFET, 5.3 A, 500 V IPAK SIHU5N50D-GE3
- RS-stocknr.:
- 256-7417
- Fabrikantnummer:
- SIHU5N50D-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,26
(excl. BTW)
€ 9,99
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 0,826 | € 8,26 |
| 20 - 40 | € 0,809 | € 8,09 |
| 50 - 90 | € 0,793 | € 7,93 |
| 100 - 490 | € 0,642 | € 6,42 |
| 500 + | € 0,533 | € 5,33 |
*prijsindicatie
- RS-stocknr.:
- 256-7417
- Fabrikantnummer:
- SIHU5N50D-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 500 V 5.3A (Tc) 104W (Tc) through hole TO-251AA and its applications are consumer electronicsdisplays, server and telecom power supplies, SMPS and in Industrial are welding, induction heating, motor drives and battery chargers.
Low area specific on-resistance
Reduced capacitive switching losses
High body diode ruggedness
Optimal efficiency and operation
Simple gate drive circuitry
Fast switching
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