Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK

RS-stocknr.:: 146-4434
Fabrikantnummer:: IRFU420PBF
Fabrikant:: Vishay

Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK

Subtotaal (1 rol van 3000 eenheden)*

€ 2.469,00

(excl. BTW)

€ 2.988,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 19 februari 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,823	€ 2.469,00

*prijsindicatie

RS-stocknr.:: 146-4434
Fabrikantnummer:: IRFU420PBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	500V
	Series	IRFU420
	Package Type	IPAK
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	42W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	RoHS
	Width	6.22mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 500V
	Series IRFU420
	Package Type IPAK
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 42W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals RoHS
	Width 6.22mm
	Automotive Standard No

Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - IRFU420PBF

This power MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control tasks in industrial systems. It operates as an N-channel enhancement-mode device suited to applications requiring elevated drain-source voltage handling and moderate continuous current, with an IPAK 3-pin package intended for Compact board-level integration.

Features and Benefits:

• 500V drain-source withstand for high-voltage switching capability • 3 Ω RDS(on) for predictable on-state conduction losses • 2.4 A continuous drain current for sustained load operation • 19 nC typical gate charge to aid switching energy estimation • 42W maximum power dissipation for thermal design margin • -55 °C to 150 °C operating range for wide thermal environments

Applications

• Suitable for industrial motor-drive gate switching stages • Ideal for high-voltage switch-mode power supplies • Used for line-voltage protection and snubber circuits • Can be used in automation control relays and drivers

What gate voltage limits should be observed during design?

Keep gate excursions within ±20V relative to source to prevent gate-oxide overstress and ensure long-term switching reliability.

How should thermal constraints be managed on the PCB?

Use adequate copper area and thermal vias to dissipate up to 42 W, and evaluate junction-to-ambient resistance for your cooling strategy.

What switching performance considerations arise from the gate charge?

Budget driver current and slew rates around the 19 nC gate charge Value to control switching losses and electromagnetic emissions during transitions.

Are there specific mounting recommendations for reliable operation?

As a surface-mount IPAK device, ensure secure solder joints and an appropriate footprint for heat spreading to maintain temperature within the -55 °C to 150 °C operational band.