STMicroelectronics Type N-Channel MOSFET, 5 A, 650 V Enhancement, 3-Pin IPAK STD5NM60T4
- RS-stocknr.:
- 188-8455
- Fabrikantnummer:
- STD5NM60T4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 5,09
(excl. BTW)
€ 6,16
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 5 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 115 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,018 | € 5,09 |
| 10 - 95 | € 0,872 | € 4,36 |
| 100 - 495 | € 0,676 | € 3,38 |
| 500 - 995 | € 0,574 | € 2,87 |
| 1000 + | € 0,476 | € 2,38 |
*prijsindicatie
- RS-stocknr.:
- 188-8455
- Fabrikantnummer:
- STD5NM60T4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.2mm | |
| Width | 2.4 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Height 6.2mm | ||
Width 2.4 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.
Low input capacitance and gate charge
HIgh dv/dt and avalanche capabilities
Low gate input resistance
Applications
Switching applications
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