Infineon Dual N BSD840N 2 Type P-Channel OptiMOSTM2 Small-Signal-Transistors, 0.88 A, 20 V Dual N, 6-Pin SOT-363
- RS-stocknr.:
- 250-0525
- Fabrikantnummer:
- BSD840NH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 192,00
(excl. BTW)
€ 231,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 12.000 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,064 | € 192,00 |
| 6000 - 12000 | € 0,06 | € 180,00 |
| 15000 + | € 0,057 | € 171,00 |
*prijsindicatie
- RS-stocknr.:
- 250-0525
- Fabrikantnummer:
- BSD840NH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | OptiMOSTM2 Small-Signal-Transistors | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.88A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD840N | |
| Pin Count | 6 | |
| Channel Mode | Dual N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type OptiMOSTM2 Small-Signal-Transistors | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.88A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD840N | ||
Pin Count 6 | ||
Channel Mode Dual N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Small Signal n-channel products are suitable for automotive applications. This device is OptiMOS 2 Small-Signal-Transistor. The Dual N-channel, Enhancement mode. The device offers Ultra Logic level (1.8V rated) and it is Avalanche rated.
Enhancement mode and Pb-free lead plating
Vds is 20 V and Id is 0.88 A
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