Renesas Electronics BEAM N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A
- RS-stocknr.:
- 234-7152
- Fabrikantnummer:
- RJK0391DPA-00#J5A
- Fabrikant:
- Renesas Electronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 234-7152
- Fabrikantnummer:
- RJK0391DPA-00#J5A
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WPAK | |
| Series | BEAM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Standards/Approvals | Pb-Free, Halogen-Free | |
| Width | 5.9mm | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WPAK | ||
Series BEAM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Standards/Approvals Pb-Free, Halogen-Free | ||
Width 5.9mm | ||
Height 0.85mm | ||
Automotive Standard No | ||
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
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