Infineon ISC Type N-Channel MOSFET, 63 A, 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1

Bekijk alle MOSFETs

Subtotaal (1 rol van 5000 eenheden)*

€ 1.515,00

(excl. BTW)

€ 1.835,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
5000 +€ 0,303€ 1.515,00

*prijsindicatie

RS-stocknr.:
234-7005
Fabrikantnummer:
ISC058N04NM5ATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

1.1 mm

Length

3.8mm

Height

4.4mm

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 63A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Gerelateerde Links