onsemi UniFET II N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS-stocknr.:
- 229-6327
- Fabrikantnummer:
- FDT4N50NZU
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 10,00
(excl. BTW)
€ 12,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,00 | € 10,00 |
| 100 - 240 | € 0,862 | € 8,62 |
| 250 - 490 | € 0,746 | € 7,46 |
| 500 - 990 | € 0,658 | € 6,58 |
| 1000 + | € 0,596 | € 5,96 |
*prijsindicatie
- RS-stocknr.:
- 229-6327
- Fabrikantnummer:
- FDT4N50NZU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET II | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET II | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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