onsemi UniFET II N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS-stocknr.:
- 229-6326
- Fabrikantnummer:
- FDT4N50NZU
- Fabrikant:
- onsemi
Subtotaal (1 rol van 4000 eenheden)*
€ 2.144,00
(excl. BTW)
€ 2.596,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 juni 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,536 | € 2.144,00 |
*prijsindicatie
- RS-stocknr.:
- 229-6326
- Fabrikantnummer:
- FDT4N50NZU
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET II | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Height | 1.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET II | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Height 1.7mm | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
Gerelateerde Links
- onsemi UniFET II N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- onsemi UniFET N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23
- onsemi UniFET N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23 FDV303N
- onsemi N-Channel MOSFET, 6.3 A, 30 V Enhancement, 3-Pin SOT-223
- onsemi N-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 NVF3055L108T1G
- onsemi N-Channel MOSFET, 6.3 A, 30 V Enhancement, 3-Pin SOT-223 FDT439N
- onsemi QFET N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223
- onsemi QFET N-Channel MOSFET, 850 mA, 200 V Enhancement, 4-Pin SOT-223