onsemi UniFET Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23 FDV303N
- RS-stocknr.:
- 121-2747
- Artikelnummer Distrelec:
- 304-36-911
- Fabrikantnummer:
- FDV303N
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 9,30
(excl. BTW)
€ 11,30
(incl. BTW)
Voeg 1100 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 3.900 stuk(s) vanaf 23 februari 2026
- Plus verzending 9.000 stuk(s) vanaf 02 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,093 | € 9,30 |
| 500 - 900 | € 0,08 | € 8,00 |
| 1000 + | € 0,069 | € 6,90 |
*prijsindicatie
- RS-stocknr.:
- 121-2747
- Artikelnummer Distrelec:
- 304-36-911
- Fabrikantnummer:
- FDV303N
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | UniFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Series UniFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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