Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1
- RS-stocknr.:
- 229-1830
- Fabrikantnummer:
- IPC50N04S55R8ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 15 eenheden)*
€ 11,445
(excl. BTW)
€ 13,845
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,763 | € 11,45 |
| 75 - 135 | € 0,725 | € 10,88 |
| 150 - 360 | € 0,693 | € 10,40 |
| 375 - 735 | € 0,664 | € 9,96 |
| 750 + | € 0,619 | € 9,29 |
*prijsindicatie
- RS-stocknr.:
- 229-1830
- Fabrikantnummer:
- IPC50N04S55R8ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPC | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Width | 5.58mm | |
| Standards/Approvals | No | |
| Length | 5.25mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPC | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Width 5.58mm | ||
Standards/Approvals No | ||
Length 5.25mm | ||
Automotive Standard AEC-Q101 | ||
40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
Summary of Features
•OptiMOS™ - power MOSFET for automotive applications
•N-channel - Enhancement mode - Normal Level
•AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green Product (RoHS compliant)
•100% Avalanche tested
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