Infineon IPC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO IPC100N04S5L2R6ATMA1
- RS-stocknr.:
- 229-1828
- Fabrikantnummer:
- IPC100N04S5L2R6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,19
(excl. BTW)
€ 11,12
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 5.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,919 | € 9,19 |
| 50 - 90 | € 0,872 | € 8,72 |
| 100 - 240 | € 0,854 | € 8,54 |
| 250 - 490 | € 0,798 | € 7,98 |
| 500 + | € 0,744 | € 7,44 |
*prijsindicatie
- RS-stocknr.:
- 229-1828
- Fabrikantnummer:
- IPC100N04S5L2R6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 75W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5.25mm | |
| Width | 5.58 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 75W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5.25mm | ||
Width 5.58 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon logic level n channel power MOSFET used for automotive applications. It is 100 percent avalanche tested and AEC Q101 qualified.
It is RoHS compliant
It has 175°C operating temperature
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