Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO

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€ 1.090,00

(excl. BTW)

€ 1.320,00

(incl. BTW)

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RS-stocknr.:
229-1829
Fabrikantnummer:
IPC50N04S55R8ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO

Series

IPC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

1.1mm

Standards/Approvals

No

Width

5.58 mm

Length

5.25mm

Automotive Standard

AEC-Q101

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6


Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.

Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.

Summary of Features


•OptiMOS™ - power MOSFET for automotive applications

•N-channel - Enhancement mode - Normal Level

•AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green Product (RoHS compliant)

•100% Avalanche tested

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