Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- RS-stocknr.:
- 228-2916
- Fabrikantnummer:
- SIRA20BDP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,72
(excl. BTW)
€ 11,76
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.980 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,944 | € 9,72 |
| 50 - 120 | € 1,752 | € 8,76 |
| 125 - 245 | € 1,364 | € 6,82 |
| 250 - 495 | € 1,208 | € 6,04 |
| 500 + | € 1,108 | € 5,54 |
*prijsindicatie
- RS-stocknr.:
- 228-2916
- Fabrikantnummer:
- SIRA20BDP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 335A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 335A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 25 V MOSFET.
100 % Rg and UIS tested
Gerelateerde Links
- Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 29 A, 30 V Enhancement, 8-Pin SO-8 SI4459ADY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 14.9 A, 30 V Enhancement, 8-Pin SO-8 SI4825DDY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 36 A, 30 V Enhancement, 8-Pin SO-8 SI4497DY-T1-GE3