Infineon CoolMOS N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251
- RS-stocknr.:
- 220-7438
- Fabrikantnummer:
- IPS60R1K0CEAKMA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 220-7438
- Fabrikantnummer:
- IPS60R1K0CEAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 61W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.4mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 61W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.4mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Low conduction losses
Low switching losses
Suitable for hard and soft switching
Easy controllable switching behaviour
Improved efficiency and consequent reduction of power consumption
Less design in effort
Easy to use
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