Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

Bekijk alle MOSFETs

Subtotaal (1 verpakking van 25 eenheden)*

€ 11,55

(excl. BTW)

€ 13,975

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 2.100 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
25 +€ 0,462€ 11,55

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
130-0898
Fabrikantnummer:
IPD60R1K0CEAUMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

61W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1


This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits


• Reduction in switching and conduction losses enhances efficiency

• Robust body diode withstands hard commutation for increased reliability

• Low gate charge characteristics simplify driver requirements during operation

• Enhanced ESD robustness promotes durability in challenging environments

• Suitable for both hard and soft switching applications optimises performance

Applications


• Utilised in power factor correction stages for effective energy management

• Employed in hard switching PWM stages for efficient power conversion and control

• Integrates seamlessly within resonant switching stages across various device

• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?


Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?


Using ferrite beads on Gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?


The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?


For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

What implications do the maximum ratings have for system design?


Understanding maximum ratings such as continuous drain current and voltage limits is Crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.

Gerelateerde Links