Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2

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€ 14,65

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€ 17,725

(incl. BTW)

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125 - 225€ 0,57€ 14,25
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Verpakkingsopties
RS-stocknr.:
214-9105
Fabrikantnummer:
IPS65R1K0CEAKMA2
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

15.3nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

37W

Maximum Operating Temperature

150°C

Width

2.4 mm

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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