Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263 IRF1404ZSTRLPBF
- RS-stocknr.:
- 214-4442
- Fabrikantnummer:
- IRF1404ZSTRLPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 11,62
(excl. BTW)
€ 14,06
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 3.140 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 1,162 | € 11,62 |
*prijsindicatie
- RS-stocknr.:
- 214-4442
- Fabrikantnummer:
- IRF1404ZSTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V TO-263 IRLS4030TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 30 V WDSON