Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263
- RS-stocknr.:
- 257-9427
- Fabrikantnummer:
- IRFS38N20DTRLP
- Fabrikant:
- Infineon
Subtotaal (1 rol van 800 eenheden)*
€ 1.147,20
(excl. BTW)
€ 1.388,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 1,434 | € 1.147,20 |
*prijsindicatie
- RS-stocknr.:
- 257-9427
- Fabrikantnummer:
- IRFS38N20DTRLP
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 320W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 320W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
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