Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220 IPA80R450P7XKSA1

RS-stocknr.:: 214-4357
Fabrikantnummer:: IPA80R450P7XKSA1
Fabrikant:: Infineon

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220 IPA80R450P7XKSA1

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500 +	€ 1,021	€ 10,21

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RS-stocknr.:: 214-4357
Fabrikantnummer:: IPA80R450P7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	800V
	Series	800V CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	29W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	150°C
	Length	10.68mm
	Standards/Approvals	No
	Height	4.85mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 800V
	Series 800V CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 29W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 150°C
	Length 10.68mm
	Standards/Approvals No
	Height 4.85mm
	Automotive Standard No

Datasheet - IPA80R450P7XKSA1

Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 11A Continuous Drain Current - IPA80R450P7XKSA1

This MOSFET is a high-voltage N-channel switching device designed for power conversion and industrial applications. It operates across a wide ambient range and is intended for through-hole mounting in conventional power assemblies, providing a robust option where elevated voltage handling and moderate current capability are required.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching applications
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies

What temperature range can it reliably operate within?

The device is specified to function from -55°C up to 150°C, supporting operation in both low-temperature and high-temperature environments.

How is it packaged for mounting and cooling?

It is supplied in a TO-220 package intended for through-hole mounting, permitting connection to heatsinks or chassis for thermal management.

What gate-drive considerations should be observed?

The maximum gate-source voltage is 30V and the typical total gate charge is 24nC, so driver selection should balance voltage headroom and drive strength to achieve the desired switching speed.

How does its conduction resistance affect design?

With a maximum drain-source on-resistance of 450mΩ, designers should account for conduction losses at expected currents and size heatsinking accordingly.