Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220

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€ 44,50

(excl. BTW)

€ 54,00

(incl. BTW)

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RS-stocknr.:
214-4356
Fabrikantnummer:
IPA80R450P7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Series

800V CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

29W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.68mm

Height

4.85mm

Standards/Approvals

No

Automotive Standard

No

Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 11A Continuous Drain Current - IPA80R450P7XKSA1


This MOSFET is a high-voltage N-channel switching device designed for power conversion and industrial applications. It operates across a wide ambient range and is intended for through-hole mounting in conventional power assemblies, providing a robust option where elevated voltage handling and moderate current capability are required.

Features and Benefits:


• 800V drain-source rating enables high-voltage switching applications
• 11A continuous drain current supports substantial load currents
• 450mΩ RDS(on) minimises conduction losses in power stages
• 24nC typical gate charge allows efficient switching performance
• 29W maximum power dissipation handles elevated thermal stress
• 30V gate tolerance permits flexible gate-drive amplitudes

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power systems in energy
• Can be used for line-side switching in booster circuits
• Suitable for laboratory and prototyping through-hole assemblies

What temperature range can it reliably operate within?


The device is specified to function from -55°C up to 150°C, supporting operation in both low-temperature and high-temperature environments.

How is it packaged for mounting and cooling?


It is supplied in a TO-220 package intended for through-hole mounting, permitting connection to heatsinks or chassis for thermal management.

What gate-drive considerations should be observed?


The maximum gate-source voltage is 30V and the typical total gate charge is 24nC, so driver selection should balance voltage headroom and drive strength to achieve the desired switching speed.

How does its conduction resistance affect design?


With a maximum drain-source on-resistance of 450mΩ, designers should account for conduction losses at expected currents and size heatsinking accordingly.

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