Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-220 IPP80R280P7XKSA1
- RS-stocknr.:
- 214-4420
- Fabrikantnummer:
- IPP80R280P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,94
(excl. BTW)
€ 10,815
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,788 | € 8,94 |
| 25 - 45 | € 1,61 | € 8,05 |
| 50 - 120 | € 1,502 | € 7,51 |
| 125 - 245 | € 1,414 | € 7,07 |
| 250 + | € 1,306 | € 6,53 |
*prijsindicatie
- RS-stocknr.:
- 214-4420
- Fabrikantnummer:
- IPP80R280P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 101W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 15.93 mm | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 101W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 15.93 mm | ||
Height 4.4mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
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