Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ070N08LS5ATMA1
- RS-stocknr.:
- 214-4341
- Fabrikantnummer:
- BSZ070N08LS5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 15 eenheden)*
€ 12,195
(excl. BTW)
€ 14,76
(incl. BTW)
Voeg 105 eenheden toe voor gratis bezorging
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 + | € 0,813 | € 12,20 |
*prijsindicatie
- RS-stocknr.:
- 214-4341
- Fabrikantnummer:
- BSZ070N08LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.4mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 14.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.4mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 14.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Summary of Features
Benefits
Potential Applications
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