Infineon OptiMOS N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN BSZ034N04LSATMA1

RS-stocknr.:: 214-4339
Fabrikantnummer:: BSZ034N04LSATMA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 40 A, 40 V N, 8-Pin PQFN BSZ034N04LSATMA1

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RS-stocknr.:: 214-4339
Fabrikantnummer:: BSZ034N04LSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	N
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	52W
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Width	3.4mm
	Standards/Approvals	No
	Length	3.4mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode N
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 52W
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Width 3.4mm
	Standards/Approvals No
	Length 3.4mm
	Automotive Standard No

Datasheet - BSZ034N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ034N04LSATMA1

This MOSFET is a surface-mount N-channel switching transistor designed for power conversion and high-current applications. It operates across a wide temperature span and is intended for compact, board-mounted designs where low conduction loss and fast switching are required.

Features and Benefits:

• Very low on-resistance 4.6mΩ reduces conduction losses
• High continuous drain current 40A supports heavy loads
• 40V drain-source rating enables mid-voltage power stages
• Typical gate charge 25nC yields faster switching response
• Power dissipation 52W permits substantial heat handling
• Gate-source limit 20V protects against excessive drive voltages

Applications

• Suitable for DC-DC converter switching stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge circuits
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load modules

What mounting approach does it require on a board?

It is supplied in a PQFN surface-mount package designed for soldered PCB attachment and thermal conduction through the package land pattern.

How does its thermal range affect deployment?

Rated from -55 to 150°C it can be placed in environments with extreme ambient and elevated junction temperatures, subject to appropriate thermal design.

What gate drive considerations apply for switching performance?

With a typical gate charge of 25nC, designers should provide sufficient gate-drive current to achieve targeted transition speeds while managing EMI.

Is it configured for enhancement-mode operation?

The device uses an N-channel conduction mode suitable for low-side and high-side configurations when paired with appropriate gate drive and level shifting.