Infineon OptiMOS 5 N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1

RS-stocknr.:: 214-4345
Fabrikantnummer:: BSZ110N08NS5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1

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100 - 180	€ 1,134	€ 22,68
200 - 480	€ 1,087	€ 21,74
500 - 980	€ 1,039	€ 20,78
1000 +	€ 0,967	€ 19,34

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RS-stocknr.:: 214-4345
Fabrikantnummer:: BSZ110N08NS5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	3.4mm
	Height	1.1mm
	Length	3.4mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 3.4mm
	Height 1.1mm
	Length 3.4mm
	Automotive Standard No

Datasheet - BSZ110N08NS5ATMA1

Infineon OptiMOS 5 Series MOSFET, 80V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ110N08NS5ATMA1

This MOSFET is a high-power N-channel semiconductor device designed for surface-mounted power switching and conversion in demanding environments. It operates across a wide temperature span suited to industrial tasks and delivers robust current handling with low voltage drop to support efficient power stages and compact thermal designs.

Features and Benefits:

• 80V drain voltage enables high-voltage switching applications
• 11mΩ low Rds(on) reduces conduction losses at high currents
• 40A continuous drain current supports heavy-load operation
• 15nC typical gate charge for fast, efficient gate switching
• 50W power dissipation allows significant heat handling
• 1.2V forward voltage minimises diode conduction losses

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for high-current motor-drive stages
• Used with DC-DC conversion modules in telecoms equipment
• Can be used for battery management and charging systems
• Appropriate for high-power LED driver circuitry

What mounting format is required for board assembly?

It is supplied in a PQFN package intended for surface-mount placement requiring a flat PCB land pattern and thermal vias for heat transfer.

How does the device handle thermal extremes during operation?

It is rated to operate from -55°C up to 150°C junction temperatures, permitting use in harsh industrial temperature profiles.

What gate-drive considerations are recommended?

The maximum gate-to-source rating is 20V and the typical total gate charge is 15nC, so a drive capable of rapid charge/discharge with appropriate slew control is advised.

Which conduction characteristic affects PCB thermal design?

Its low drain-source resistance of 11mΩ dictates lower I²R losses, shifting emphasis to managing switching and package thermal dissipation pathways.