Fabrikantnummer

STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT

RS-stocknr.:: 213-3941
Fabrikantnummer:: SCTL35N65G2V
Fabrikant:: STMicroelectronics

STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT

Subtotaal (1 rol van 3000 eenheden)*

€ 40.359,00

(excl. BTW)

€ 48.834,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
3000 +	€ 13,453	€ 40.359,00

*prijsindicatie

RS-stocknr.:: 213-3941
Fabrikantnummer:: SCTL35N65G2V
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerFLAT
	Series	SCTL35N65G2V
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3.3V
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Power Dissipation Pd	417W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	8.1mm
	Width	8.1 mm
	Height	0.95mm
	Automotive Standard	No

	Alles selecteren
	Merk STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerFLAT
	Series SCTL35N65G2V
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3.3V
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Power Dissipation Pd 417W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 8.1mm
	Width 8.1 mm
	Height 0.95mm
	Automotive Standard No

Datasheet - SCTL35N65G2V

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT

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