STMicroelectronics N-Channel STL160 N-Channel MOSFET, 160 A, 60 V Enhancement, 8-Pin PowerFLAT STL160N6LF7
- RS-stocknr.:
- 358-984
- Fabrikantnummer:
- STL160N6LF7
- Fabrikant:
- STMicroelectronics
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€ 1,16
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€ 1,40
(incl. BTW)
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- Plus verzending 250 stuk(s) vanaf 12 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 1,16 |
| 10 - 99 | € 1,06 |
| 100 - 499 | € 0,97 |
| 500 - 999 | € 0,90 |
| 1000 + | € 0,80 |
*prijsindicatie
- RS-stocknr.:
- 358-984
- Fabrikantnummer:
- STL160N6LF7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Operating Frequency | 1MHz | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Output Power | 125W | |
| Package Type | PowerFLAT | |
| Series | STL160 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Width | 6.1mm | |
| Standards/Approvals | JEDEC | |
| Length | 4.8mm | |
| Height | 900μm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Operating Frequency 1MHz | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 60V | ||
Output Power 125W | ||
Package Type PowerFLAT | ||
Series STL160 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Width 6.1mm | ||
Standards/Approvals JEDEC | ||
Length 4.8mm | ||
Height 900μm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET, based on STripFET F7 technology, delivers exceptionally low on-state resistance (RDS(on)) for enhanced efficiency. Its design ensures reduced capacitance and gate charge, enabling Faster and more efficient switching with excellent EMI immunity.
Excellent FoM
Low Crss by Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS
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