Vishay SiSS78LDN Type N, Type N-Channel MOSFET, 66.7 A, 70 V Enhancement, 8-Pin PowerPAK 1212-8S SiSS78LDN-T1-GE3

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Verpakkingsopties
RS-stocknr.:
210-5020
Fabrikantnummer:
SiSS78LDN-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

66.7A

Maximum Drain Source Voltage Vds

70V

Package Type

PowerPAK 1212-8S

Series

SiSS78LDN

Mount Type

Surface, Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

0.83mm

Standards/Approvals

No

Width

3.4 mm

Length

3.4mm

Automotive Standard

No

The Vishay N-Channel 70 V (D-S) MOSFET has PowerPAK 1212-8S package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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