Name: Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
Brand: Vishay
SKU: 268-8348
Price: 0.88 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26.2A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK 1212-8S
	Series	SISS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0315Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	54.3W
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26.2A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK 1212-8S
	Series SISS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0315Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 54.3W
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SISS5710DN-T1-GE3

Land van herkomst:: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

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