Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- RS-stocknr.:
- 281-6040
- Fabrikantnummer:
- SISS66DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 11,80
(excl. BTW)
€ 14,30
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,18 | € 11,80 |
| 100 - 240 | € 0,926 | € 9,26 |
| 250 - 490 | € 0,848 | € 8,48 |
| 500 - 990 | € 0,779 | € 7,79 |
| 1000 + | € 0,665 | € 6,65 |
*prijsindicatie
- RS-stocknr.:
- 281-6040
- Fabrikantnummer:
- SISS66DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 178.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00138Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.8W | |
| Typical Gate Charge Qg @ Vgs | 24.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 178.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00138Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.8W | ||
Typical Gate Charge Qg @ Vgs 24.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.
TrenchFET Generation IV power MOSFET
SKYFET with monolithic schottky diode
Gerelateerde Links
- Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay N-Channel MOSFET, 66.7 A, 70 V, 8-Pin PowerPAK 1212-8S SiSS78LDN-T1-GE3
- Vishay SISS Type N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5108DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3
- Vishay SISS Type N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3