onsemi NTB Type N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263
- RS-stocknr.:
- 205-2493
- Fabrikantnummer:
- NTBG160N120SC1
- Fabrikant:
- onsemi
Subtotaal (1 rol van 800 eenheden)*
€ 3.411,20
(excl. BTW)
€ 4.127,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 800 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 4,264 | € 3.411,20 |
*prijsindicatie
- RS-stocknr.:
- 205-2493
- Fabrikantnummer:
- NTBG160N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.9V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 33.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Width | 9.7 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 4.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.9V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 33.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Width 9.7 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 4.3mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
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