onsemi NTB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG040N120SC1
- RS-stocknr.:
- 202-5690
- Fabrikantnummer:
- NTBG040N120SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 95,76
(excl. BTW)
€ 115,87
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tekort aan aanbod
- 325 stuk(s) klaar voor verzending vanaf een andere locatie
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 19,152 | € 95,76 |
| 50 + | € 16,51 | € 82,55 |
*prijsindicatie
- RS-stocknr.:
- 202-5690
- Fabrikantnummer:
- NTBG040N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 357W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.7V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 357W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.7V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 10.2mm | ||
Height 15.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Gerelateerde Links
- onsemi NTB N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1
- onsemi NTB N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263 NTBG080N120SC1
- onsemi NTB N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG022N120M3S
- onsemi NTB N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB N-Channel MOSFET & Diode, 19.5 A, 1200 V Enhancement, 7-Pin TO-263 NTBG160N120SC1
- onsemi NTB N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263
- onsemi NTB N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC