onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NTBG040N120SC1
- RS-stocknr.:
- 202-5690
- Fabrikantnummer:
- NTBG040N120SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 89,80
(excl. BTW)
€ 108,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tekort aan aanbod
- Plus verzending 725 stuk(s) vanaf 05 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 17,96 | € 89,80 |
| 50 + | € 15,48 | € 77,40 |
*prijsindicatie
- RS-stocknr.:
- 202-5690
- Fabrikantnummer:
- NTBG040N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 357W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Forward Voltage Vf | 3.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 357W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Forward Voltage Vf 3.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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