onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- RS-stocknr.:
- 254-7660
- Fabrikantnummer:
- NTBG022N120M3S
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 800 eenheden)*
€ 9.393,60
(excl. BTW)
€ 11.366,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 - 800 | € 11,742 | € 9.393,60 |
| 1600 - 1600 | € 11,507 | € 9.205,60 |
| 2400 + | € 11,272 | € 9.017,60 |
*prijsindicatie
- RS-stocknr.:
- 254-7660
- Fabrikantnummer:
- NTBG022N120M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
Gerelateerde Links
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG022N120M3S
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG025N065SC1
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L
- onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin TO-263