Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3
- RS-stocknr.:
- 204-7222
- Fabrikantnummer:
- SiR104LDP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 19,14
(excl. BTW)
€ 23,16
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,957 | € 19,14 |
| 100 - 180 | € 0,937 | € 18,74 |
| 200 - 480 | € 0,738 | € 14,76 |
| 500 - 980 | € 0,672 | € 13,44 |
| 1000 + | € 0,655 | € 13,10 |
*prijsindicatie
- RS-stocknr.:
- 204-7222
- Fabrikantnummer:
- SiR104LDP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiR104LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.26mm | |
| Width | 1.12 mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiR104LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.26mm | ||
Width 1.12 mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM). It is tuned for the lowest RDS x Qoss FOM.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
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